STP1028

    An Anomalous Absorption Model to Account for Accumulation in N-on-1 Damage in Si and GaAs

    Published: Jan 1988


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    Abstract

    In this work we have investigated a model for anomalous optical absorption and laser damage in Si and GaAs. The model determines the increase in charge density in the vicinity of small, compared to the optical wavelength, clusters of defects in the material. The aim is to determine if increases in defect density in these regions can account for the experimentally observed decrease in damage threshold or accumulation. We found that 10% to 20% reductions in damage threshold could be accounted for by this model, but that this is only sufficient to account for some of the experimental observations.

    Keywords:

    N-on-1 damage, silicon, gallium arsenide, modelling laser damage


    Author Information:

    Shetty, NR
    Fullbright Fellow, Karnataka Regional Engineering College,

    Becker, MF
    The University of Texas at Austin Center for Materials Science, Austin, Texas

    Walser, RM
    The University of Texas at Austin Center for Materials Science, Austin, Texas


    Paper ID: STP18601S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP18601S


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