Thermal Conductivity of Dielectric Films and Correlation to Damage Threshold at 1064nm

    Published: Jan 1988

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    An infrared line scanning technique has been used to measure thermal conductivities of TiO2, Ta2O5, ZrO2, HfO2, A12O3 and SiO2 layers. Damage thresholds are determined using a two stage Nd:Yag laser with pulse length of 14ns and spot size of 300μ. A correlation between thermal conductivity, absorption coefficient, melting point and damage threshold is established. To explain the relation, theoretical models based on absorption and inclusion breakdown are analysed.


    Thermal conductivity, thin films, oxide materials, laser damage

    Author Information:

    Akhtar, SMJ
    DAAD Fellow, Pakistan Institute of Nuclear Science and TechnologyCSSP, Punjab University, IslamabadLahore,

    Ristau, D
    INSTITUT FÜR QUANTENOPTIK, Universität Hannover, Hannover,

    Ebert, J
    INSTITUT FÜR QUANTENOPTIK, Universität Hannover, Hannover,

    Committee/Subcommittee: E13.03

    DOI: 10.1520/STP18574S

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