STP1028

    A Study of Thin Film Growth in the ZrO2 - SiO2 System

    Published: Jan 1988


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    Abstract

    X-ray diffraction and transmission electron microscopy have been used to examine the microstructures of thin films of pure ZrO2 - SiO2 films formed by e-beam coevaporation. The results suggest that films composed of 100% ZrO2 grow by the formation of tapered polycrystalline columns. Near the substrate the columns are small in diameter and consist of a single crystalline phase, but at increasing distances from the substrate the column diameters increase and material with two polycrystalline phases appears. At a given distance from the substrate, small additions of SiO2 to the film composition result in a smaller column diameter. Films with 25 mole% SiO2 show an amorphous electron diffraction pattern, a result consistent with previously observed x-ray diffraction patterns. The surfaces of the amorphous films appear nearly featureless and are significantly smoother than the surfaces of the pure ZrO2 films.

    Keywords:

    e-beam evaporation, microstructure, thin films, transmission electron microscopy, x-ray diffraction, ZrO, 2, - SiO, 2, system


    Author Information:

    Farabaugh, EN
    National Bureau of Standards, Gaithersburg, MD

    Sun, YN
    Guest Worker, Langhou Institute of Physics, Langhou,

    Sun, J
    Guest Worker, Shanghai Institute of Ceramics, Shanghai,

    Feldman, A
    National Bureau of Standards, Gaithersburg, MD

    Chen, H-H
    Guest Work, Precision Instrument Development Center, Hsinchu,


    Paper ID: STP18570S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP18570S


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