Published: Jan 1988
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A knowledge of the thermal properties of optical materials is essential to an understanding of laser-induced damage for long-pulse or continuous-wave irradiation. This area has been long neglected partly because of the difficulty of reliable measurement. An extension of the thin film measurement technique described at the Boulder Laser Damage Conference in 1984 for the measurement of thermal conductivity is presented in this paper. Data are given for bulk Si, SiC, Si/SiC, and SiO2. These results are interpreted using simple theories of inhomogeneous or locally disordered materials. Also indicated are the relationships between local material stress and thermal conductivity, and the temperature dependence of the thermal conductivity for several models of local disorder. Recommendations for further work are also indicated.
dielectric materials, disorder, stress, temperature dependence, thermal conductivity
Naval Weapons Center, China Lake, California
Paper ID: STP18541S