STP1340

    Measurement of Minority Carrier Recombination Lifetime in Silicon Wafers by Measurement of Photoconductivity Decay by Microwave Reflectance: Result of Round Robin Test

    Published: Jan 1998


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    Abstract

    The round robin test was conducted, in order to check the deviation of lifetime errors by microwave photoconductive decay (µ -PCD) method. The samples were CZ thermally oxidized wafers of p- and n-type. Two resistivity values were set between 3 Ω cm and 47 Ω cm and three lifetime levels between 2 µ s and 1500 µ s, and total 12 kinds of wafers were characterized in the round robin test. 19 organizations joined the test. The center value of the standard deviation of primary mode lifetime errors was 11.8% for an injected photon density of 5×1013 photons/cm2.

    Keywords:

    microwave photoconductive decay method, round robin test, recombination lifetime, primary mode lifetime, l/e lifetime


    Author Information:

    Miyazaki, M
    Manager, Silicon technology R&D center, Sumitomo Sitix Corporation, Kohoku-cho, Kishima-gun, Saga,

    Kawai, K
    Engineer-in-chief, Mitsubishi Materials Silicon Corp., Noda-City, Chiba,

    Ichimura, M
    Assistant Professor, nagoya Institute of Technology, Gokiso, Showa, Nagoya,


    Paper ID: STP15717S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP15717S


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