STP1340

    Oxygen Precipitation Characterization Using the Elymat Technique

    Published: Jan 1998


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    Abstract

    In processed wafers the depth of the precipitate-free zone and the density of bulk microdefects are of great importance. In this case the constant diffusion length is no longer valid. A two region model (defect-free / precipitated region) was assumed with two different diffusion lengths LD in a depth t. Solving the set of differential equations a three-dimensional picture of denuded zone depth and diffusion length in the precipitated bulk of the wafer is obtained. Investigating precipitated wafers using the Electrolytical Metal Tracer technique a correlation between the bulk microdefects and the measured minority carrier diffusion length was found. An empirical expression was determined to estimate Bulk Micro Defect density in the range from 8 × 104 to 2 × 107 cm−2. This means for practical application to receive more information on the oxygen precipitation behavio r of the whole wafer using an improved Electrolytical Metal Tracer technique.

    Keywords:

    ELYMAT technique, oxygen precipitation, denuded zone, diffusion length, injection level


    Author Information:

    Obermeier, G
    Wacker Siltronic, Application, Burghausen,

    Hage, J
    Wacker Siltronic, Application, Burghausen,

    Huber, D
    Wacker Siltronic, Application, Burghausen,


    Paper ID: STP15714S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP15714S


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