SYMPOSIA PAPER Published: 01 January 1998
STP15710S

Influence of Iron and Copper on Minority Carrier Recombination Lifetime in Silicon

Source

A contamination experiment was carried to prove the possibility of a quantitative determination of the Fe-concentration in the high injection level region for p-type silicon. Calculation factors for two formulas were obtained, one assuming only FeB as life-time killer and another general one. A comparison between DLTS-, SPV- and μ-PCD-results showed a very good correlation of all instruments. Copper was proved to have also a strong influence on lifetime measurement, especially in n-type Silicon. Cu is suspected to affect the efficiency of Oxide passivation. Nitrogen also seemed to have a considerable influence at least in connection with a Cu contamination.

Author Information

Kempf, A
Wacker Siltronic AG, Burghausen, Germany
Blöchl, P
Wacker Siltronic AG, Burghausen, Germany
Huber, A
Wacker Siltronic AG, Burghausen, Germany
Fabry, F
Wacker Siltronic AG, Burghausen, Germany
Meinecke, L
Techn. University Clausthal, Clausthal-Zellerfeld, Germany
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Details
Developed by Committee: F01
Pages: 259–267
DOI: 10.1520/STP15710S
ISBN-EB: 978-0-8031-5389-9
ISBN-13: 978-0-8031-2489-9