STP1340: Influence of Iron and Copper on Minority Carrier Recombination Lifetime in Silicon

    Kempf, A
    Wacker Siltronic AG, Burghausen,

    Blöchl, P
    Wacker Siltronic AG, Burghausen,

    Huber, A
    Wacker Siltronic AG, Burghausen,

    Fabry, F
    Wacker Siltronic AG, Burghausen,

    Meinecke, L
    Techn. University Clausthal, Clausthal-Zellerfeld,

    Pages: 9    Published: Jan 1998


    Abstract

    A contamination experiment was carried to prove the possibility of a quantitative determination of the Fe-concentration in the high injection level region for p-type silicon. Calculation factors for two formulas were obtained, one assuming only FeB as life-time killer and another general one. A comparison between DLTS-, SPV- and μ-PCD-results showed a very good correlation of all instruments. Copper was proved to have also a strong influence on lifetime measurement, especially in n-type Silicon. Cu is suspected to affect the efficiency of Oxide passivation. Nitrogen also seemed to have a considerable influence at least in connection with a Cu contamination.

    Keywords:

    carrier lifetime, recombination, silicon, μ-PCD, Iron, Copper


    Paper ID: STP15710S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP15710S


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