SEDL / STP / STP1340-EB / STP15710S

Influence of Iron and Copper on Minority Carrier Recombination Lifetime in Silicon

Kempf, A
Wacker Siltronic AG, Burghausen,

Blöchl, P
Wacker Siltronic AG, Burghausen,

Huber, A
Wacker Siltronic AG, Burghausen,

Fabry, F
Wacker Siltronic AG, Burghausen,

Meinecke, L
Techn. University Clausthal, Clausthal-Zellerfeld,

Pages: 9    Published: Jan 1998

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Abstract

A contamination experiment was carried to prove the possibility of a quantitative determination of the Fe-concentration in the high injection level region for p-type silicon. Calculation factors for two formulas were obtained, one assuming only FeB as life-time killer and another general one. A comparison between DLTS-, SPV- and μ-PCD-results showed a very good correlation of all instruments. Copper was proved to have also a strong influence on lifetime measurement, especially in n-type Silicon. Cu is suspected to affect the efficiency of Oxide passivation. Nitrogen also seemed to have a considerable influence at least in connection with a Cu contamination.