Extended defects generated during RTP processing at the quartz wafer support and contact fingers of the wafer transfer robot have been examined by minority carrier recombination lifetime, τ^r, and X-Ray Topography. Silicon CZ wafers of 8”dia have been mapped laterally, and the defects imaged as a function of depth. Various RTP chamber cleaning and annealing experiments were carried out to control the reduced lifetime/pin defect formation process. A τ^r reduction of up to two orders of magnitude can occur at the contact points. The low lifetime has been profiled in-depth by Laser Microwave Photoconductance Decay following sequential sample thinning to yield 3D lifetime maps. HF-passivation was used to lower the impact of surface recombination. A two exponential model was used to separate the surface and bulk components of lifetime, which were resolved by the Nelder-Mead non-linear fitting method. The range of lifetime degradation at the RTP induced defects varies with the level of contamination which occurs during pin/wafer contact. Fortunately, the extended defects, i.e. slip dislocations, are confined to the wafer backside, where they getter the contaminants.