SYMPOSIA PAPER Published: 01 January 1998
STP15708S

The Application of Minority Carrier Lifetime Techniques in Modern CZ Silicon

Source

The applications of minority carrier recombination lifetime measurement techniques to a variety of problems associated with the manufacture and use of modern CZ silicon are discussed. The uses of the ELYMAT and microwave photoconductive decay techniques applied to issues of transition metal contamination, ultra long carrier lifetimes, oxygen clustering and precipitation, intrinsic point defect reactions and gettering phenomena are considered. The uses and limitations of injection level control and surface recombination velocity measurement are also discussed.

Author Information

Falster, R
MEMC Electronic Materials, SpA, Novara, Italy
Borionetti, G
MEMC Electronic Materials, SpA, Novara, Italy
Price: $25.00
Contact Sales
Related
Reprints and Permissions
Reprints and copyright permissions can be requested through the
Copyright Clearance Center
Details
Developed by Committee: F01
Pages: 226–249
DOI: 10.1520/STP15708S
ISBN-EB: 978-0-8031-5389-9
ISBN-13: 978-0-8031-2489-9