STP1340

    The Application of Minority Carrier Lifetime Techniques in Modern CZ Silicon

    Published: Jan 1998


      Format Pages Price  
    PDF (556K) 24 $25   ADD TO CART
    Complete Source PDF (7.5M) 24 $87   ADD TO CART


    Abstract

    The applications of minority carrier recombination lifetime measurement techniques to a variety of problems associated with the manufacture and use of modern CZ silicon are discussed. The uses of the ELYMAT and microwave photoconductive decay techniques applied to issues of transition metal contamination, ultra long carrier lifetimes, oxygen clustering and precipitation, intrinsic point defect reactions and gettering phenomena are considered. The uses and limitations of injection level control and surface recombination velocity measurement are also discussed.

    Keywords:

    Minority carrier recombination lifetime, Czochralski silicon, transition metals, oxygen precipitation, point defects


    Author Information:

    Falster, R
    Silicon Materials Research Director and Applications Research Manager, MEMC Electronic Materials, SpA, Novara,

    Borionetti, G
    Silicon Materials Research Director and Applications Research Manager, MEMC Electronic Materials, SpA, Novara,


    Paper ID: STP15708S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP15708S


    CrossRef ASTM International is a member of CrossRef.