STP1340: The Application of Minority Carrier Lifetime Techniques in Modern CZ Silicon

    Falster, R
    Silicon Materials Research Director and Applications Research Manager, MEMC Electronic Materials, SpA, Novara,

    Borionetti, G
    Silicon Materials Research Director and Applications Research Manager, MEMC Electronic Materials, SpA, Novara,

    Pages: 24    Published: Jan 1998


    Abstract

    The applications of minority carrier recombination lifetime measurement techniques to a variety of problems associated with the manufacture and use of modern CZ silicon are discussed. The uses of the ELYMAT and microwave photoconductive decay techniques applied to issues of transition metal contamination, ultra long carrier lifetimes, oxygen clustering and precipitation, intrinsic point defect reactions and gettering phenomena are considered. The uses and limitations of injection level control and surface recombination velocity measurement are also discussed.

    Keywords:

    Minority carrier recombination lifetime, Czochralski silicon, transition metals, oxygen precipitation, point defects


    Paper ID: STP15708S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP15708S


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