STP1340: Non-Contact Silicon Epilayer and Subsurface Characterization with UV/mm Wave Technique

    Ogita, Y-I
    Professor, Kanagawa Institute of Technology, Atsugi, Kanagawa,

    Tate, N
    Manager, Isobe R & D Center, Shin-Etsu Handotai Co. Ltd., Annaka, Gunma,

    Masumura, H
    Manager, Shirakawa R & D Center, Shin-Etsu Handotai Co. Ltd., Nishishirakawa, Fukushima,

    Miyazaki, M
    Manager, Silicon Technology R & D Center, Sumitomo Sitix Corp., Kishima, Saga,

    Yakushiji, K
    Manager, Silicon Research & Development Center, Showa Denko K. K., Chichibu, Saitama,

    Pages: 15    Published: Jan 1998


    Abstract

    Carrier lifetimes and interface recombination velocities in p/p+ and n/n+ Si epitaxial wafers are determined from the photoconductivity decays (PCDs) measured using UV/mm-wave technique. Mo and Fe are found in p/p+ Si epitaxial wafers. Gate oxide integrity (GOI) is not dependent on roughness of Rrms (root-mean-square surface roughness) 0.097–0.247 nm but dependent on subsurface damage induced by chemical mechanical polishing (CMP). Photoconductivity amplitude (PCA) signal measured by the UV/mm-wave technique correlates closely the gate oxide integrity yield. CMP induced by subsurface damage is removed by SC1 cleaning and the procedure is monitored by the UV/mm-wave technique. Lifetimes in a denuded zone (DZ) and intrinsic gettering (IG) layer are determined from the PCA signal measured using the UV/mm-wave technique.

    Keywords:

    silicon epitaxial wafer, carrier lifetime, surface recombination velocity, subsurface damage, GOI, mirror polishing, CMP, PCD, millimeter wave


    Paper ID: STP15703S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP15703S


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