SEDL / STP / STP1340-EB / STP15703S

Non-Contact Silicon Epilayer and Subsurface Characterization with UV/mm Wave Technique

Ogita, Y-I
Professor, Kanagawa Institute of Technology, Atsugi, Kanagawa,

Tate, N
Manager, Isobe R & D Center, Shin-Etsu Handotai Co. Ltd., Annaka, Gunma,

Masumura, H
Manager, Shirakawa R & D Center, Shin-Etsu Handotai Co. Ltd., Nishishirakawa, Fukushima,

Miyazaki, M
Manager, Silicon Technology R & D Center, Sumitomo Sitix Corp., Kishima, Saga,

Yakushiji, K
Manager, Silicon Research & Development Center, Showa Denko K. K., Chichibu, Saitama,

Pages: 15    Published: Jan 1998

Download this paper for $25 PDF (288K)          View License Agreement
Abstract

Carrier lifetimes and interface recombination velocities in p/p⁺ and n/n⁺ Si epitaxial wafers are determined from the photoconductivity decays (PCDs) measured using UV/mm-wave technique. Mo and Fe are found in p/p⁺ Si epitaxial wafers. Gate oxide integrity (GOI) is not dependent on roughness of R^rms (root-mean-square surface roughness) 0.097–0.247 nm but dependent on subsurface damage induced by chemical mechanical polishing (CMP). Photoconductivity amplitude (PCA) signal measured by the UV/mm-wave technique correlates closely the gate oxide integrity yield. CMP induced by subsurface damage is removed by SC1 cleaning and the procedure is monitored by the UV/mm-wave technique. Lifetimes in a denuded zone (DZ) and intrinsic gettering (IG) layer are determined from the PCA signal measured using the UV/mm-wave technique.