Present Status of the Surface Photovoltage Method (SPV) for Measuring Minority Carrier Diffusion Length and Related Parameters

    Published: Jan 1998

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    We present an overview of the physics and practical issues related to surface photovoltage measurement of the minority carrier diffusion length and its application to monitoring recombination center defects in silicon. A tutorial description is given of the role of pertinent processes like injection, recombination and trapping. The evolution of the SPV method is presented followed by a description of most recent refinements addressing the measurement of long diffusion lengths in silicon wafers with emphasis on accuracy, measuring speed, tool-to-tool reproducibility and, practically the most important question of monitoring, iron concentration.


    surface photovoltage, minority carrier diffusion length, iron contamination, recombination lifetime

    Author Information:

    Lagowski, J
    Semiconductor Diagnostics, Inc., Tampa, FL

    Edelman, P
    Semiconductor Diagnostics, Inc., Tampa, FL

    Faifer, V
    Semiconductor Diagnostics, Inc., Tampa, FL

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP15700S

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