SYMPOSIA PAPER Published: 01 January 1998
STP15699S

Optimization and Control of Elymat Lifetime Measurement for Use in a Manufacturing Setting

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In order for the Elymat minority carrier diffusion length imaging technique to become a useful and robust manufacturing tool for characterization of silicon wafers, optimum machine settings must be developed and tight control of the measurement process must be maintained to achieve maximum lifetimes and repeatable results. This paper describes a method for determining optimum injection currents to compensate for resistivity characteristics of the sample. Test results, obtained on wafers with resistivity ranging from 0.9 to 20 ohm-cm subjected to 60 measurements each using various combinations of wavelength and photo injection currents, are discussed. This paper also presents test results for the Injection Level Search (ILS) option designed to set the optimum injection level for each individual sample. Finally, the authors make recommendations concerning methods for control of the measurement process (i.e., control charting, troubleshooting, etc.).

Author Information

Keefe, GA
MEMC Electronic Materials Inc., St. Peters, MO
Hughes, WM
MEMC Electronic Materials Inc., St. Peters, MO
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Details
Developed by Committee: F01
Pages: 112–122
DOI: 10.1520/STP15699S
ISBN-EB: 978-0-8031-5389-9
ISBN-13: 978-0-8031-2489-9