You are being redirected because this document is part of your ASTM Compass® subscription.
    This document is part of your ASTM Compass® subscription.


    The Optical Excitation Effect in Transition Metal Doped CZ Silicon Wafers Revealed by the Microwave Photoconductive Decay Lifetime Measurement

    Published: Jan 1998

      Format Pages Price  
    PDF (240K) 9 $25   ADD TO CART
    Complete Source PDF (7.5M) 9 $87   ADD TO CART


    The prospect of identifying metallic impurities in p-type silicon has been studied by using the microwave photoconductive decay lifetime measurement method at various high injection levels. Samples intentionally doped with transition metals during crystal growth were prepared. It was found that point defects associated with Fe-B, Cr-B, and Ti, in decreasing order of effectiveness, degrade recombination lifetime in p-type Si.The effects of Fe-B pairs and Fe-B pair dissociation on recombination lifetime were also compared by various high injection levels.


    light illumination, recombination lifetime, injection level, Fe-B

    Author Information:

    Kurita, K
    Engineer, Mitsubishi Materials Silicon Corporation, Omiya, Saitama,

    Shingyouji, T
    Assistant General Manager, Noda-chi, Chiba-ken,

    Committee/Subcommittee: F01.12

    DOI: 10.1520/STP15694S

    CrossRef ASTM International is a member of CrossRef.