Carrier Lifetime Measurements by Microwave Photoconductivity Decay Method

    Published: Jan 1998

      Format Pages Price  
    PDF (312K) 12 $25   ADD TO CART
    Complete Source PDF (7.5M) 12 $87   ADD TO CART


    The recombination lifetimes of silicon wafers were studied using microwave photo-conductivity decay(μ PCD) method with variable photo-injection function. For samples with surface inversion layers, the lifetimes increased as the injected carrier concentration decreased, and converged toward the value determined by the SiO2/Si interface trap density. It was found that the bulk recombination lifetimes could be measured in middle-high injection. Any clear dependence was not observed in the samples with surface accumulation layers. The recombination lifetimes of light-irradiated p-type silicon with iron contamination revealed strong dependence on injected carrier concentration due to breaking up iron-boron pairs. Molybdenum contamination of the epitaxial layers in p/p+ and p/p− wafers were also investigated using the differential μPCD technique.


    recombination lifetime, photo-conductivity decay, μ, PCD, iron, molybdenum, interface trap density, silicon, epitaxial

    Author Information:

    Hashizume, H
    General Manager, Genesis Technology Inc., Kobe, HYOGO,

    Sumie, S
    Manager and General Manager, Kobe Steel, Ltd., Kobe, HYOGO,

    Nakai, Y
    Manager and General Manager, Kobe Steel, Ltd., Kobe, HYOGO,

    Committee/Subcommittee: F01.12

    DOI: 10.1520/STP15693S

    CrossRef ASTM International is a member of CrossRef.