STP1382

    High Resolution Gate Oxide Integrity (GOI) Measurement in Near-Perfect Silicon

    Published: Jan 2000


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    Abstract

    Gate Oxide Integrity (GOI) measurements are performed for various types of silicon wafers: Pure Silicon™, Epitaxial, Hydrogen Annealed, Low COP CZ, and Conventional CZ wafers. A clear dependence of GOI parameters is observed with Time Zero Dielectric Breakdown (TZDB) and Time Dependent Dielectric Breakdown (TDDB) measurements. Using multisource measurement units can perform high resolution GOI measurements. Time Dependent Dielectric Breakdown (TDDB) measurements on 5300 MOS capacitors on a 200 mm wafer have been made successfully with this technique. High resolution GOI measurements, in particular, make clear the correlation between grown-in defects and oxide defects in CZ wafers. It is also demonstrated that this technique is highly suitable for the evaluation of various types of near-perfect silicon, which inherently has no defects.

    Keywords:

    GOI, TZDB, TDDB, High resolution, grown-in defects, R-OSF


    Author Information:

    Murakami, Y
    Manager, Engineer, and Assistant Director, Mitsubishi Materials Silicon Corporation, Chiba-ken,

    Yamazaki, T
    Manager, Engineer, and Assistant Director, Mitsubishi Materials Silicon Corporation, Chiba-ken,

    Itou, W
    Manager, Engineer, and Assistant Director, Mitsubishi Materials Silicon Corporation, Chiba-ken,

    Shingyouji, T
    Manager, Engineer, and Assistant Director, Mitsubishi Materials Silicon Corporation, Chiba-ken,


    Paper ID: STP13490S

    Committee/Subcommittee: F01.06

    DOI: 10.1520/STP13490S


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