STP1382

    Application of Quantox Measurements to Identify Phosphorus Contamination in Silicon Wafers

    Published: Jan 2000


      Format Pages Price  
    PDF (332K) 11 $25   ADD TO CART
    Complete Source PDF (3.5M) 11 $55   ADD TO CART


    Abstract

    During a three-year period, MOS fab experienced a 0.3% parametric failure rate on LOCOS devices. The observed failure mode is high N- and low P-channel current leakage. Only wafer number five of a lot was affected. This selective (believed) phosphorus contamination was appropriately named the “Phantom Wafer Failure”. MOS fab implemented routine monitoring on all oxidation furnaces using the Keithley Quantox characterization tool in December 1997. Flatband voltage and mobile ion concentration were monitored using this tool. It was only after implementing this monitoring that the fab was able to identify the source of the phosphorus contamination. This report illustrates using the Keithley Quantox to identify the source of this phosphorus contamination.

    Keywords:

    quantox, corona oxide semiconductor, cos, phosphorus contamination, furnace monitoring


    Author Information:

    Dexter, MA
    Process Engineer, Texas Instruments Incorporated, Dallas, TX

    Hasslinger, KM
    Process Engineer, Texas Instruments Incorporated, Dallas, TX

    Fritz, JR
    Process Engineer, Texas Instruments Incorporated, Dallas, TX

    Ullo, CA
    Diffusion Section Manager, Texas Instruments Incorporated, Dallas, TX


    Paper ID: STP13486S

    Committee/Subcommittee: F01.10

    DOI: 10.1520/STP13486S


    CrossRef ASTM International is a member of CrossRef.