STP1382

    Gate Oxide Reliability Assessment and Some Connections to Oxide Integrity

    Published: Jan 2000


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    Abstract

    Most characterizations of oxide reliability involve extrapolation of high voltage results to low voltage operation. Wearout at high voltages tends to be global while many reliability attributes, such as breakdown and stress-induced-leakage-currents (SILCs), tend to be local. This paper will explore several oxide reliability assessment attributes, including oxide breakdown, stress-induced-leakage-currents, and trap generation. These attributes will be described and an attempt will be made to associate them with oxide integrity.

    Keywords:

    oxide reliability, oxide breakdown, trap generation, oxide integrity, reliability assessment, stress-induced-leakage-currents, SILCs, electric breakdowns, thermal breakdown, dielectric breakdown


    Author Information:

    Dumin, DJ
    Professor of Electrical Engineering, Clemson University, Clemson, South Carolina


    Paper ID: STP13480S

    Committee/Subcommittee: F01.05

    DOI: 10.1520/STP13480S


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