STP1447

    Revisiting the Use of SiC as a Post Irradiation Temperature Monitor

    Published: Jan 2004


      Format Pages Price  
    PDF (192K) 11 $25   ADD TO CART
    Complete Source PDF (17M) 11 $112   ADD TO CART


    Abstract

    Silicon carbide has been used as a post-irradiation temperature monitor since first proposed for this use in 1961. The basic technique has been the repeated measurement of the length of a SiC monitor following isochronal annealing. This technique has been shown to overestimate irradiation temperature by ∼100°C. This paper discusses the use of alternate techniques, including electrical resistivity, to infer irradiation temperature. It is shown that electrical resistivity predicts irradiation temperature within ∼20°C of actual irradiation temperature. Additionally, this technique can be used in the low-temperature (<150°C) amorphization regime, and in irradiation temperatures where irradiation damage is characterized by simple defects in crystalline SiC (<900°C).

    Keywords:

    silicon carbide, temperature monitor, irradiation, electrical resistivity, electrical conductivity


    Author Information:

    Snead, LL
    Oak Ridge National Laboratory, Oak Ridge, TN

    Williams, AM
    Oak Ridge National Laboratory, Oak Ridge, TN

    Qualls, AL
    Oak Ridge National Laboratory, Oak Ridge, TN


    Paper ID: STP11262S

    Committee/Subcommittee: E10.02

    DOI: 10.1520/STP11262S


    CrossRef ASTM International is a member of CrossRef.