STP1405

    Microstructural Stability of SiC/SiC Composites under Dual-Beam Ion Irradiation

    Published: Jan 2001


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    Abstract

    Microstructural evolution of silicon carbide fiber-reinforced silicon carbide matrix composites (SiC/SiC composites) during dual-beam ion irradiation was studied. The composites had been fabricated by means of chemical vapor infiltration (CVI) and polymer impregnation and pyrolysis (PIP) methods using advanced fibers, i.e., Hi-NicalonTM Type-S and TyrannoTM-SA, as well as conventional fibers. Dual-beam ion irradiation was performed to 10 dpa at 873K and 60appmHe/dpa. Composites with advanced low-oxygen near-stoichiometric SiC fiber with high crystallinity and beta-SiC matrix exhibited superior irradiation resistance, in contrast to that amorphous Si-C-O based fibers and conventional polymer-derived matrix exhibited microstructural instability in association with irradiation-induced crystallization. Pyrolytic carbon deposited as the fiber-matrix (F-M) interphase exhibited irradiation-induced amorphization and the helium co-implantation enhanced it. Post-irradiation heat treatment caused significant microstructural changes across the F-M interphases at temperatures as low as the composites are supposed to retain their mechanical strength.

    Keywords:

    SiC/SiC composite, ion irradiation, helium effect, microstructure, SiC fiber, TEM


    Author Information:

    Katoh, Y
    Associate Professor, Graduate Student and Professor, Institute of Advanced Energy, Kyoto University, Kyoto,

    CREST-ACE, Japan Science and Technology Corporation, Kawaguchi,

    Kishimoto, H
    Associate Professor, Graduate Student and Professor, Institute of Advanced Energy, Kyoto University, Kyoto,

    Ando, M
    Japan Atomic Energy Research Institute, Naka-gun,

    Kohyama, A
    Associate Professor, Graduate Student and Professor, Institute of Advanced Energy, Kyoto University, Kyoto,

    CREST-ACE, Japan Science and Technology Corporation, Kawaguchi,

    Shibayama, T
    Research Associate and Professor, Hokkaido University, Sapporo,

    Takahashi, H
    Research Associate and Professor, Hokkaido University, Sapporo,


    Paper ID: STP10572S

    Committee/Subcommittee: E10.07

    DOI: 10.1520/STP10572S


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