Measurements in Silicon Planar Technology: Mechanical Properties of Semiconductor Surfaces

    Volume 1, Issue 4 (July 1973)

    ISSN: 0090-3973

    CODEN: JTEOAD

    Page Count: 5


    Mendel, E
    IBM System Products Division, East Fishkill, Hopewell Junction, New York

    Abstract

    Methods for growing silicon single crystals and then fabricating them into polished wafer form are reviewed. A survey of many of the parameters and measurement techniques needed to specify the polished surface is included. The activities of the Section on the Mechanical Properties of Semiconductor Surfaces are discussed.


    Paper ID: JTE10023J

    DOI: 10.1520/JTE10023J

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    Author
    Title Measurements in Silicon Planar Technology: Mechanical Properties of Semiconductor Surfaces
    Symposium , 0000-00-00
    Committee F01