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Volume 1, Issue 4 (July 1973)

ISSN: 1945-7553
CODEN: JTEVAB
Page Count: 2


Materials for Diffusion and Epitaxy

Gittler, FL
Bell Telephone Laboratories, Inc., Allentown, Pa.

Abstract

Most semiconductor devices are built in the epitaxial layer on a silicon wafer. The properties of the starting epitaxial material are important, because they help to determine the final device parameters. In order to obtain good epitaxial material, the reactants and dopants used must be of known purity. Analytical methods are not sufficiently sensitive and a Use Test has been attempted. Section 5.2 of ASTM Committee F-1, on Materials for Diffusion and Epitaxy, is at this time designing and evaluating an epitaxial reactant purity evaluator. A cleaning method has been devised, which is an important step in the Use Test.



Keywords:
silicon, epitaxy, silane, purity, diffusion

Paper ID: JTE10022J
DOI: 10.1520/JTE10022J
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Author Title Materials for Diffusion and Epitaxy Symposium , 0000-00-00 Committee F01