Volume 1, Issue 4 (July 1973)
In order to intelligently specify epitaxial silicon starting material for semiconductor devices, such as, diodes, transistors and integrated circuits, a precise knowledge of the variation of impurity concentration with depth is usually needed. Also, in order to control the epitaxial process, an accurate knowledge of the resistivity must be available in a relatively short time. Innovative techniques that yield impurity concentration profiles will be discussed along with methods that give a rapid indication of the average slice resistivity. Relative merits and disadvantages of each method will be assessed along with the work of the ASTM Committee F-1, Subcommittee 6, Section 6.2, on Epitaxial Resistivity.