Silicon Epitaxial Thickness Measurements: Why and How

    Volume 1, Issue 4 (July 1973)

    ISSN: 0090-3973

    CODEN: JTEOAD

    Page Count: 4


    Gardner, EE
    IBM System Products Division, Essex Junction, Vermont

    Abstract

    In the decade since the introduction of epitaxial layers for the fabrication of semiconductor devices, several techniques have been proposed for the measurement of the thicknesses of these layers. Three techniques, bevel and stain, stacking fault, and infrared fringes are discussed in detail. A brief history of the progress of these techniques to become ASTM tentatives or standards is reported.


    Paper ID: JTE10020J

    DOI: 10.1520/JTE10020J

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    Author
    Title Silicon Epitaxial Thickness Measurements: Why and How
    Symposium , 0000-00-00
    Committee F01