ISSN: 1945-7553
CODEN: JTEVAB
Page Count: 4

Silicon Epitaxial Thickness Measurements: Why and How

Gardner, EE
IBM System Products Division, Essex Junction, Vermont

Abstract

In the decade since the introduction of epitaxial layers for the fabrication of semiconductor devices, several techniques have been proposed for the measurement of the thicknesses of these layers. Three techniques, bevel and stain, stacking fault, and infrared fringes are discussed in detail. A brief history of the progress of these techniques to become ASTM tentatives or standards is reported.

Keywords:
silicon, epitaxial thickness, crystal defects, twinning, infrared interference, bevel and stain

Paper ID: JTE10020J
DOI: 10.1520/JTE10020J
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