IBM System Products Division, Essex Junction, Vermont
In the decade since the introduction of epitaxial layers for the fabrication of semiconductor devices, several techniques have been proposed for the measurement of the thicknesses of these layers. Three techniques, bevel and stain, stacking fault, and infrared fringes are discussed in detail. A brief history of the progress of these techniques to become ASTM tentatives or standards is reported.
Paper ID: JTE10020J