Volume 1, Issue 4 (July 1973)

    Silicon Epitaxial Thickness Measurements: Why and How

    CODEN: JTEOAD

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    Abstract

    In the decade since the introduction of epitaxial layers for the fabrication of semiconductor devices, several techniques have been proposed for the measurement of the thicknesses of these layers. Three techniques, bevel and stain, stacking fault, and infrared fringes are discussed in detail. A brief history of the progress of these techniques to become ASTM tentatives or standards is reported.


    Author Information:

    Gardner, EE
    IBM System Products Division, Essex Junction, Vermont


    Stock #: JTE10020J

    ISSN: 0090-3973

    DOI: 10.1520/JTE10020J

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    Author
    Title Silicon Epitaxial Thickness Measurements: Why and How
    Symposium , 0000-00-00
    Committee F01