A Preliminary Mathematical Removal-Rate Model for Si CMP

    Volume 2, Issue 6 (June 2005)

    ISSN: 1546-962X

    CODEN: JAIOAD

    Published Online: 1 June 2005

    Page Count: 11


    Estragnat, E
    Ecole Centrale de Lyon,

    Martin, JM
    Ecole Centrale de Lyon,

    Ng, D
    Texas A&M University,

    Kulkarni, M
    Texas A&M University,

    Liang, H
    Texas A&M University,

    Texas A&M University, College Station, TX

    (Received 7 June 2004; accepted 2 March 2005)

    Abstract

    Based on the experimental removal rate data of silicon chemical-mechanical polishing (CMP), we conducted mathematical analysis on effects of surface roughness, asperities, and different length scales on material removal rate. A preliminary physical model was developed enabling consideration of mechanical and chemical removal during the Si CMP process. This model is compared with experimental results obtained through a tabletop polisher. Research results showed that the removal rate decreased with time and eventually became constant. The model has a higher prediction power when the surface roughness is high. However, with a smooth surface, the asperity height does not take a major role in the model. In such, the chemical interactions become important.


    Paper ID: JAI12895

    DOI: 10.1520/JAI12895

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    Author
    Title A Preliminary Mathematical Removal-Rate Model for Si CMP
    Symposium , 0000-00-00
    Committee G02