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Volume 1, Issue 4 (April 2004)

ISSN: 1546-962X
CODEN: JAIOAD
Published Online: 7 April 2004
Page Count: 12


Effect of Ion Irradiation on Microstructure and Hardness in Zircaloy-4

Zu, XT
Visiting Scientist, University of Michigan, Ann Arbor, MI

Atzmon, M
Associate Professor, University of MichiganUniversity of Michigan, Ann ArborAnn Arbor, MIMI

Wang, LM
Research Scientist, University of Michigan, Ann Arbor, MI

You, LP
Visiting Scientist, University of Michigan, Ann Arbor, MI

Wan, FR
Visiting Scientist, University of Michigan, Ann Arbor, MI

Was, GS
Professor, University of MichiganUniversity of Michigan, Ann ArborAnn Arbor, MIMI

Adamson, RB
ConsultantZircology Plus, Fremont, CA

(Received 8 July 2002; accepted 9 July 2003)

Abstract

In studies of radiation effects on materials for reactor applications, it is desirable to identify irradiation methods that induce microstructural effects similar to those of neutrons, but at reduced time and expense. In the present study, 2 MeV protons were used to introduce up to seven displacements per atom in Zircaloy 4 at 350°C. The effect on the intermetallic precipitates, the formation of dislocation loops and hardness were investigated by analytical and high-resolution transmission electron microscopy (TEM). In addition, the precipitate evolution during 600 keV Ne ion irradiation at 350°C was monitored by in situ TEM. The results are compared with literature data for neutron-irradiated Zircaloy. While Ne irradiation leads to precipitate amorphization, no amorphization or chemical redistribution is observed in the proton-irradiated sample. The dislocation-loop size and density in the Zr matrix of the proton-irradiated alloy are similar to those in the neutron-irradiated alloys.



Keywords:
Zircaloy, transmission electron microscopy, precipitates, amorphization, hardness

Paper ID: JAI11316
DOI: 10.1520/JAI11316
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Author Title Effect of Ion Irradiation on Microstructure and Hardness in Zircaloy-4 Symposium The Effects of Radiation on Materials: 21st International Symposium, 2002-06-20 Committee E10