Volume 3, Issue 8 (September 2006)

    TRIM Modeling of Displacement Damage in SiC for Monoenergetic Neutrons

    (Received 20 June 2005; accepted 5 May 2006)

    CODEN: JAIOAD

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    Abstract

    Although silicon carbide is a very good semiconductor material for the fabrication of diode detectors for use as neutron power monitors in nuclear reactors, the electrical properties of the diodes may be altered because of interactions between energetic neutrons and SiC atoms. If the energy that is transferred from a neutron to an atom in a collision exceeds some threshold value, the atom will be moved from its original position, creating displacement damage. Accurately modeling displacement damage is a first step to finding ways to eliminate or decrease the amount of damage the displacements induce. The methodology that we have used to estimate the number of displacements per atom per fluence, using two codes (MCNP and TRIM) is presented in this paper, along with examples of the results of our calculations.


    Author Information:

    Khorsandi, B
    Graduate Student, Ohio State University, Nuclear Engineering Program, Columbus, OH

    Blue, TE
    Professor, Ohio State University, Nuclear Engineering Program, Columbus, OH

    Windl, W
    Professor, Ohio State University, Columbus, OH

    Kulisek, J
    Graduate Student, Ohio State University, Nuclear Engineering Program, Columbus, OH


    Stock #: JAI100358

    ISSN: 1546-962X

    DOI: 10.1520/JAI100358

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    Author
    Title TRIM Modeling of Displacement Damage in SiC for Monoenergetic Neutrons
    Symposium Reactor Dosimetry, 12th International Symposium, 2005-05-13
    Committee E10