Volume 3, Issue 8 (September 2006)
TRIM Modeling of Displacement Damage in SiC for Monoenergetic Neutrons
Although silicon carbide is a very good semiconductor material for the fabrication of diode detectors for use as neutron power monitors in nuclear reactors, the electrical properties of the diodes may be altered because of interactions between energetic neutrons and SiC atoms. If the energy that is transferred from a neutron to an atom in a collision exceeds some threshold value, the atom will be moved from its original position, creating displacement damage. Accurately modeling displacement damage is a first step to finding ways to eliminate or decrease the amount of damage the displacements induce. The methodology that we have used to estimate the number of displacements per atom per fluence, using two codes (MCNP and TRIM) is presented in this paper, along with examples of the results of our calculations.