ISSN: 1546-962X
Page Count: 11

A Preliminary Mathematical Removal-Rate Model for Si CMP
Estragnat, E
Ecole Centrale de Lyon,

Martin, JM
Texas A&M University,

Ng, D
Texas A&M University, TX

Kulkarni, M

Liang, H

Abstract

Based on the experimental removal rate data of silicon chemical-mechanical polishing (CMP), we conducted mathematical analysis on effects of surface roughness, asperities, and different length scales on material removal rate. A preliminary physical model was developed enabling consideration of mechanical and chemical removal during the Si CMP process. This model is compared with experimental results obtained through a tabletop polisher. Research results showed that the removal rate decreased with time and eventually became constant. The model has a higher prediction power when the surface roughness is high. However, with a smooth surface, the asperity height does not take a major role in the model. In such, the chemical interactions become important.

Keywords:
CMP modeling, chemical-mechanical wear mechanisms, silicon

Paper ID: JAI12895
DOI: 10.1520/JAI12895
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