ISSN: 0149-6115
Page Count: 5

Discussion on “The Use of Hall Effect Semiconductors in Geotechnical Instrumentation” by C. R. I. Clayton, S. A. Khatrush, A. V. D. Bica, and A. Siddique

Tatsuoka, F
Institute of Industrial Science, University of Tokyo,

Shibuya, S
Institute of Industrial Science, University of Tokyo,

Goto, S
Technology Research Center, Taisei Corp.,

Sato, T
Institute of Industrial Science, University of Tokyo,

Kong, XJ
Dailian University of Technology,

Abstract

Keywords:
instrumentation, strain, stress, calibrations, errors, triaxial tests, deformation gages, pressure cells

Paper ID: GTJ10149J
DOI: 10.1520/GTJ10149J
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