1. Rationale
Add New Test procedures for New GaN material on SiC or Sapphire Substrate using non-destructive and destructive test methods (F76).
Keywords
gallium arsenide; Hall coefficient; Hall data; Hall mobility; Hall resistivity; semiconductor; silicon; single crystal; van der Pauw; Bridge-type electrical/electronic materials; Crystal lattice structure; Eight-contact semiconductor specimens; Electrical conductors (semiconductors); Electrical resistance/resistivity--semiconductors; Etching (materials/process); Gallium arsenide phosphide; Germanium--semiconductor applications; Hall effect measurement; Lamellar semiconductor materials; Paralleliped semiconductor materials; Single crystal silicon semiconductors;
Citing ASTM Standards
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