ASTM WK33856

    Revision of F76 - 08 Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors

    (What is a Work Item?)

    Active Standard: F76 - 08

    Developed by Subcommittee: F01.15 | Committee F01 | Contact Staff Manager


    1. Rationale

    Add New Test procedures for New GaN material on SiC or Sapphire Substrate using non-destructive and destructive test methods (F76).


    gallium arsenide; Hall coefficient; Hall data; Hall mobility; Hall resistivity; semiconductor; silicon; single crystal; van der Pauw; Bridge-type electrical/electronic materials; Crystal lattice structure; Eight-contact semiconductor specimens; Electrical conductors (semiconductors); Electrical resistance/resistivity--semiconductors; Etching (materials/process); Gallium arsenide phosphide; Germanium--semiconductor applications; Hall effect measurement; Lamellar semiconductor materials; Paralleliped semiconductor materials; Single crystal silicon semiconductors;
    Citing ASTM Standards
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    Work Item Status

    Date Initiated:

    Technical Contact:
    Danh Nguyen

    Draft Under Development