ASTM WK30820

    Revision of F996 - 10 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

    (What is a Work Item?)

    Active Standard: F996 - 11

    Developed by Subcommittee: F01.11 | Committee F01 | Contact Staff Manager



    WK30820

    1. Rationale

    Correction to equation 4.


    Keywords

    c/v characteristics; currentvoltage characteristics; interface states; ionizing radiation; MOSFET; oxide-trapped holes; threshold voltage shift; trapped holes; Current measurement--semiconductors; Electrical conductors (semiconductors); Gate and field oxides; Ionizing radiation; MOSFETs; Radiation exposure--electronic components/devices; Silicon semiconductors; Threshold voltage
    Citing ASTM Standards
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    Work Item Status

    Date Initiated:
    10-29-2010

    Technical Contact:

    Status:
    Draft Under Development