Standards

ASTM WK30820

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Work Item: ASTM WK30820 - Revision of F996 - 10 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics


Active Standard: F996 - 11

Developed by Subcommittee: F01.11 | Committee F01 Home | Contact Staff Manager



1. Rationale

Correction to equation 4.

Keywords

c/v characteristics; current–voltage characteristics; interface states; ionizing radiation; MOSFET; oxide-trapped holes; threshold voltage shift; trapped holes; Current measurement--semiconductors; Electrical conductors (semiconductors); Gate and field oxides; Ionizing radiation; MOSFETs; Radiation exposure--electronic components/devices; Silicon semiconductors; Threshold voltage

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Work Item Status:
Date Initiated:10-29-2010
Technical Contact: Lydell Evans

Status: Draft Under Development

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