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ASTM WK24715

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Work Item: ASTM WK24715 - Revision of F996-98(2003) Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics


Active Standard: F996-98(2003)

Developed by Subcommittee: F01.11 | Committee F01 Home | Contact Staff Manager



1. Rationale

The additional information needs to be added to this document, since its last revisions.

Keywords

c/v characteristics; current-voltage characteristics; interface states; ionizing radiation; MOSFET; oxide-trapped holes; threshold voltage shift; trapped holes

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Work Item Status:
Date Initiated:06-24-2009
Technical Contact: Lydell Evans

Status: Draft Under Development

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