ASTM F26-87a(1999)

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 These test methods cover techniques for determining the crystallographic orientation of a surface which is roughly parallel to a low-index atomic plane in single crystals used primarily for semiconductor devices.

1.2 Two types of test methods are covered as follows:

1.2.1 Test Method A, X-ray Diffraction Orientation- This test method may be used for the orientation of all semiconductive single crystals.

1.2.2 Test Method B, Optical Orientation- This test method is limited in application at the present time to elemental semiconductors.

1.3 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 6.

Index Terms

germanium; orientation; preferential etch; semiconductor; silicon; X-ray diffraction;

Citing ASTM Standards

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