ASTM F996 - 11 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics


    Citing ASTM Standards Citation data is made available by participants in CrossRefs Cited-by Linking service. A comprehensive list of citations to this standard are listed here.

    F1892 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices


    Referenced ASTM Standards The documents listed below are referenced within the subject standard but are not provided as part of the standard.

    E666 Practice for Calculating Absorbed Dose From Gamma or X Radiation

    E668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices

    E1249 Practice for Minimizing Dosimetry Errors in Radiation Hardness Testing of Silicon Electronic Devices Using Co-60 Sources

    E1894 Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray Sources