ASTM F996 - 11 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage CharacteristicsCiting ASTM Standards
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F1892 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices Referenced ASTM Standards
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