Standards Related to F996 - Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics /
Also Available in these Collections:
Developed By: Committee F01 on Electronics
Developed By: Committee F18 on Electrical Protective Equipment for Workers
Developed By: Committee E61 on Radiation Processing
Developed By: Committee D14 on Adhesives
