All Standards Related to F1893

Standards

Standards Related to F1893 - Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices /

F1892-12	Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
Also Available in these Collections: Annual Book of ASTM Standards Online: 10.04 Developed By: Committee F01 on Electronics

F773M-10	Practice for Measuring Dose Rate Response of Linear Integrated Circuits [Metric]
Also Available in these Collections: Annual Book of ASTM Standards Online: 10.04 Developed By: Committee F01 on Electronics

F744M-10	Standard Test Method for Measuring Dose Rate Threshold for Upset of Digital Integrated Circuits [Metric]
Also Available in these Collections: Annual Book of ASTM Standards Online: 10.04 Developed By: Committee F01 on Electronics

F526-11	Standard Test Method for Measuring Dose for Use in Linear Accelerator Pulsed Radiation Effects Tests
Also Available in these Collections: DOD-Adopted ASTM Standards Annual Book of ASTM Standards Online: 12.02 Developed By: Committee E10 on Nuclear Technology and Applications

F1467-11	Standard Guide for Use of an X-Ray Tester (≈10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
Also Available in these Collections: Annual Book of ASTM Standards Online: 10.04 Developed By: Committee F01 on Electronics

E668-13	Standard Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation-Hardness Testing of Electronic Devices
Also Available in these Collections: DOD-Adopted ASTM Standards Annual Book of ASTM Standards Online: 12.02 Developed By: Committee E10 on Nuclear Technology and Applications

E666-09	Standard Practice for Calculating Absorbed Dose From Gamma or X Radiation
Also Available in these Collections: DOD-Adopted ASTM Standards Annual Book of ASTM Standards Online: 12.02 Developed By: Committee E10 on Nuclear Technology and Applications

F980-10	Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
Also Available in these Collections: Annual Book of ASTM Standards Online: 10.04 Developed By: Committee F01 on Electronics