Standard Historical Last Updated: Aug 16, 2017 Track Document
ASTM C863-00

Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures

Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures C0863-00 ASTM|C0863-00|en-US Standard Test Method for Evaluating Oxidation Resistance of Silicon Carbide Refractories at Elevated Temperatures Standard new BOS Vol. 15.01 Committee C08
$ 66.00 In stock

Scope

1.1 This test method covers the evaluation of the oxidation resistance of silicon carbide refractories at elevated temperatures in an atmosphere of steam. The steam is used to accelerate the test. Oxidation resistance is the ability of the silicon carbide (SiC) in the refractory to resist conversion to silicon dioxide (SiO 2 ) and its attendant crystalline growth.

1.2 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Price:
Contact Sales
Related
Reprints and Permissions
Reprints and copyright permissions can be requested through the
Copyright Clearance Center
Details
Book of Standards Volume: 15.01
Developed by Subcommittee: C08.04
Pages: 2
DOI: 10.1520/C0863-00
ICS Code: 81.080