Technical Committees / Committee F01 /
Committee F01.11 on Nuclear and Space Radiation Effects
Showing results 1-13 of 13 matching ACTIVE standards under the jurisdiction of F01.11 F01 Home
F448-11 Test Method for Measuring Steady-State Primary Photocurrent
F528-99(2005) Standard Test Method of Measurement of Common-Emitter D-C Current Gain of Junction Transistors (Withdrawn 2011) See also WK30641 proposed revision
F615M-95(2008) Standard Practice for Determining Safe Current Pulse-Operating Regions for Metallization on Semiconductor Components (Metric) See also WK37031 proposed revision
F616M-96(2003) Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric) (Withdrawn 2009) See also WK24337 proposed withdrawal
F616-92 Standard Test Method for Measuring MOSFET Drain Leakage Current
F617-00 Standard Test Method for Measuring MOSFET Linear Threshold Voltage (Withdrawn 2006)
F676-97(2003) Standard Test Method for Measuring Unsaturated TTL Sink Current (Withdrawn 2009) See also WK24338 proposed withdrawal
F744M-10 Standard Test Method for Measuring Dose Rate Threshold for Upset of Digital Integrated Circuits [Metric]
F769-00 Standard Test Method for Measuring Transistor and Diode Leakage Currents (Withdrawn 2006)
F773M-10 Practice for Measuring Dose Rate Response of Linear Integrated Circuits [Metric]
F773-92 Practice for Measuring Dose Rate Response of Linear Integrated Circuits
F980-10 Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
F980-92 Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
F996-11 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics See also WK30820 proposed revision
F1190-11 Standard Guide for Neutron Irradiation of Unbiased Electronic Components
F1192-11 Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices
F1259M-96(2003) Standard Guide for Design of Flat, Straight-Line Test Structures for Detecting Metallization Open-Circuit or Resistance-Increase Failure Due to Electromigration [Metric] (Withdrawn 2009) See also WK23471 proposed withdrawal See also WK24339 proposed withdrawal
F1260M-96(2003) Standard Test Method for Estimating Electromigration Median Time-to-Failure and Sigma of Integrated Circuit Metallizations [Metric] (Withdrawn 2009) See also WK23470 proposed withdrawal See also WK25820 proposed withdrawal
F1261M-96(2003) Standard Test Method for Determining the Average Electrical Width of a Straight, Thin-Film Metal Line [Metric] (Withdrawn 2009) See also WK23469 proposed withdrawal See also WK24341 proposed withdrawal
F1262M-95(2008) Standard Guide for Transient Radiation Upset Threshold Testing of Digital Integrated Circuits (Metric) See also WK37055 proposed revision
F1263-11 Standard Guide for Analysis of Overtest Data in Radiation Testing of Electronic Parts
F1467-11 Standard Guide for Use of an X-Ray Tester (≈10 keV Photons) in Ionizing Radiation Effects Testing of Semiconductor Devices and Microcircuits
F1892-12 Standard Guide for Ionizing Radiation (Total Dose) Effects Testing of Semiconductor Devices
F1893-11 Guide for Measurement of Ionizing Dose-Rate Survivability and Burnout of Semiconductor Devices
0 matching Proposed New Standards under the jurisdiction of F01.11 F01 Home
F528-99(2005) Standard Test Method of Measurement of Common-Emitter D-C Current Gain of Junction Transistors (Withdrawn 2011)
F616M-96(2003) Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric) (Withdrawn 2009)
F676-97(2003) Standard Test Method for Measuring Unsaturated TTL Sink Current (Withdrawn 2009)
F1259M-96(2003) Standard Guide for Design of Flat, Straight-Line Test Structures for Detecting Metallization Open-Circuit or Resistance-Increase Failure Due to Electromigration [Metric] (Withdrawn 2009)
F1260M-96(2003) Standard Test Method for Estimating Electromigration Median Time-to-Failure and Sigma of Integrated Circuit Metallizations [Metric] (Withdrawn 2009)
F1261M-96(2003) Standard Test Method for Determining the Average Electrical Width of a Straight, Thin-Film Metal Line [Metric] (Withdrawn 2009)
